specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 1 of 6 april 2006 ecp200d 2 watt, high linearit y ingap hbt amplifier product information the communications ed g e tm product features ? 400 ? 2300 mhz ? +33 dbm p1db ? +51 dbm output ip3 ? 18 db gain @ 900 mhz ? +5v single positive supply ? mttf > 100 years ? 16-pin 4x4mm lead-free/green/ rohs-compliant qfn package applications ? final stage amplifiers for repeaters ? mobile infrastructure product description the ecp200d is a high dynamic range driver amplifier in a low-cost surface mount package. the ingap/gaas hbt is able to achieve high performance for various narrowband-tuned application circuits with up to +51 dbm oip3 and +33 dbm of compressed 1db power. it is housed in an industry standard in a lead-free/ green/rohs-compliant 16-pin 4x4mm qfn surface- mount package. all devices are 100% rf and dc tested. the ecp200d is targeted for use as a driver amplifier in wireless infrastructure wher e high linearity and medium power is required. an internal active bias allows the ecp200d to maintain high linearity over temperature and operate directly off a single +5v supply. this combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3g base stations. functional diagram function pin no. vref 1 rf input 3 rf output 10, 11 vbias 16 gnd backside paddle n/c or gnd 2, 4-9, 12-15 specifications (1) parameter units min typ max operational bandwidth mhz 400 2300 test frequency mhz 2140 gain db 9 10 input return loss db 20 output return loss db 6.8 p1db dbm +32 +33.2 output ip3 (2) dbm +47 +48 is-95a channel power @ -45 dbc acpr, 1960 mhz dbm +27.5 wcdma channel power @ -45 dbc aclr, 2140 mhz dbm +25.3 noise figure db 7.7 operating current range, icc (3) ma 700 800 900 device voltage, vcc v +5 1. test conditions unless otherwise noted: 25 oc, +5v vsupply, 2140 mhz, in tuned application circuit. 2. 3oip measured with two tones at an output power of +17 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. 3. this corresponds to the quiescent current or operating current under small- signal conditions into pins 6, 7, and 8. it is expected that the current can increase by an additional 200 ma at p1db. pin 1 is used as a reference voltage for the internal bias ing circuitry. it is expected that pin 1 will pull 22ma of current when used with a series bias resistor of r1=15 . (ie. total device current typically will be 822 ma.) absolute maximum rating parameter rating operating case temperature -40 to +85 c storage temperature -65 to +150 c rf input power (continuous) +28 dbm device voltage +8 v device current 1400 ma device power 8 w junction temperature +250 c operation of this device above any of th ese parameters may cause permanent damage. typical performance (4) parameter units typical frequency mhz 900 1960 2140 s21 ? gain db 18 11 10 s11 ? input r.l. db -18 -19 -20 s22 ? output r.l. db -11 -6.8 -6.8 p1db dbm +33 +33.4 +33.2 output ip3 dbm +49 +51 +48 is-95a channel power @ -45 dbc acpr dbm +27 +27.5 wcdma channel power @ -45 dbc aclr dbm +25.3 noise figure db 8.0 7.3 7.7 device bias (3) +5 v @ 800 ma 4. typical parameters reflect performanc e in a tuned application circuit at +25 c. ordering information part no. description ecp200d-g 2 watt, high linearity ingap hbt amplifier (lead-free/green/rohs-compliant 16-pin 4x4mm qfn package) ECP200D-PCB900 900 mhz evaluation board ecp200d-pcb1960 1960 mhz evaluation board ecp200d-pcb2140 2140 mhz evaluation board 1 2 3 4 12 11 10 9 16 15 14 13 5 6 7 8 n/c rf out rf out n/c vre f n/c rf in n/c vbias n/c n/c n/c n/c n/c n/c n/c
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 2 of 6 april 2006 ecp200d 2 watt, high linearit y ingap hbt amplifier product information the communications ed g e tm typical device data s-parameters (v cc = +5 v, i cc = 800 ma, t = 25 c, unmatched 50 ohm system) 50 550 1050 1550 2050 2500 frequency (mhz) gain / maximum stable gain 0 5 10 15 20 25 30 35 40 gain (db) db(|s(2,1)|) db(gmax()) 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 4000mhz swp min 50mhz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 4000mhz swp min 50mhz notes: the gain for the unmatched device in 50 ohm system is shown as th e trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain is shown in the dashed red line. the impedance plots are shown from 50 ? 3000 mhz, with markers placed at 0. 5 ? 3.0 ghz in 0.5 ghz increments. s-parameters (v cc = +5 v, i cc = 800 ma, t = 25 c, unmatched 50 ohm system, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -0.80 -177.34 27.72 107.79 -45.30 19.06 -0.81 -139.65 100 -0.60 178.13 22.13 96.85 -43.21 11.92 -0.79 -158.43 200 -0.64 174.02 16.20 89.13 -44.86 -4.05 -0.62 -168.80 400 -0.76 166.66 10.54 80.79 -42.84 6.99 -0.35 -177.29 600 -0.89 158.43 7.75 72.52 -44.05 2.89 -0.47 179.92 800 -1.08 150.86 6.09 64.42 -43.61 -7.72 -0.66 179.00 1000 -1.54 141.98 5.29 54.50 -42.64 -4.97 -0.73 177.98 1200 -2.48 131.55 5.24 41.62 -39.25 -33.49 -0.82 176.35 1400 -5.25 115.96 5.83 20.85 -39.43 -52.73 -0.58 175.10 1600 -16.57 118.86 6.03 -9.41 -37.39 -100.38 -0.58 174.84 1800 -7.12 -149.33 3.81 -47.41 -39.26 -126.48 -0.42 170.66 2000 -2.68 -169.62 0.37 -72.56 -40.69 -169.19 -0.52 169.04 2200 -1.34 175.50 -3.32 -89.96 -45.63 -163.76 -0.53 167.35 2400 -0.80 164.47 -6.81 -102.05 -50.41 149.05 -0.61 164.01 2600 -0.49 154.67 -9.46 -112.59 -48.80 157.02 -0.62 162.14 2800 -0.53 146.29 -12.22 -121.23 -50.62 69.74 -0.68 157.85 3000 -0.50 136.44 -14.55 -128.37 -49.46 79.86 -0.77 156.81 device s-parameters are available for download off of the website at: http://www.wj.com application circuit pc board layout circuit board material: .014? getek, si ngle layer, 1 oz copper, microstrip li ne details: width = .026?, spacing = .026? the silk screen markers ?a?, ?b?, ?c?, etc. and ?1?, ?2?, ?3 ?, etc. are used as placemarkers for the input and output tuning shunt capacitors ? c8 and c9. the markers and vias are spaced in .050? increments.
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 3 of 6 april 2006 ecp200d 2 watt, high linearit y ingap hbt amplifier product information the communications ed g e tm 900 mhz application circ uit (ECP200D-PCB900) typical rf performance at 25 c frequency 900 mhz s21 ? gain 18 db s11 ? input return loss -18 db s22 ? output return loss -11 db output p1db +33 dbm output ip3 (+17 dbm / tone, 1 mhz spacing) +49 dbm channel power (@-45 dbc acpr, is-95 9 channels fwd) +27 dbm noise figure 8.0 db device / supply voltage +5 v quiescent current (1) 800 ma 1. this corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16. id=c2 c=56 pf id=c3 c=56 pf id=c4 c=1e7 pf id=c6 c=10 pf id=c7 c=1000 pf id=c8 c=8.2 pf id=l1 l=18 nh id=c11 r=0 ohm id=c9 c=10 pf id=c5 c=1000 pf id=r2 r=22 ohm id=r3 r=51 ohm tlinp id=tl1 z0=50 ohm l=75 mil eeff=3.16 loss=0 f0=0 ghz tlinp id=tl2 z0=50 ohm l=375 mil eeff=3.16 loss=0 f0=0 ghz id=r1 r=15 ohm id=r4 r=0 ohm id=c1 c=56 pf 1 2 3 4 5678 9 10 11 12 13 14 15 16 id=ecp200d c8 should be placed at silk screen marker "b" on the wj evaluation board. c9 should be placed at silk screen marker "8" on the +5.6v zener vsupply = +5v size 1008 wj evaluation board. s21 vs. frequency 15 16 17 18 19 20 840 860 880 900 920 940 frequency (mhz) s21 ( db ) +25c -40c +85c s11 vs. frequency -30 -25 -20 -15 -10 -5 0 840 860 880 900 920 940 frequency (mhz) s11 ( db ) +25c -40c +85c s22 vs. frequency -20 -15 -10 -5 0 840 860 880 900 920 940 frequency (mhz) s22 ( db ) +25c -40c +85c noise figure vs. frequency 0 2 4 6 8 10 840 860 880 900 920 940 frequency (mhz) nf ( db ) -40c +25c +85c p1db vs. frequency circuit boards are optimized at 880 mhz 26 28 30 32 34 36 840 860 880 900 920 940 frequency (mhz) p1db ( dbm ) -40c +25c +85c acpr vs. channel power is-95, 9 ch. fwd, 885 khz offset, 30 khz meas bw, 900 mhz -70 -60 -50 -40 22 23 24 25 26 27 28 29 output channel power (dbm) acpr ( dbc ) -40 c +25 c +85 c oip3 vs. frequency +25 c, +17 dbm/tone 35 40 45 50 55 840 860 880 900 920 940 frequency (mhz) oip3 ( dbm ) oip3 vs. temperature freq. = 900 mhz, 901 mhz, +17 dbm/tone 35 40 45 50 55 -40 -15 10 35 60 85 temperature (c) oip3 ( dbm ) oip3 vs. output power freq. = 900 mhz, 901 mhz, +25 c 35 40 45 50 55 12 14 16 18 20 22 24 26 output power (dbm) oip3 ( dbm )
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 4 of 6 april 2006 ecp200d 2 watt, high linearit y ingap hbt amplifier product information the communications ed g e tm 1960 mhz application circuit (ecp200d-pcb1960) typical rf performance at 25 c frequency 1960 mhz s21 ? gain 11 db s11 ? input return loss -20 db s22 ? output return loss -6.8 db output p1db +33.4 dbm output ip3 (+17 dbm / tone, 1 mhz spacing) +51 dbm channel power (@-45 dbc acpr, is-95 9 channels fwd) +27.5 dbm noise figure 7.3 db device / supply voltage +5 v quiescent current (1) 800 ma 1. this corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16. id=c2 c=56 pf id=c4 c=1e7 pf id=c5 c=1000 pf id=c6 c=10 pf id=c7 c=1000 pf id=c8 c=2.2 pf id=c9 c=3.9 pf id=l1 l=18 nh id=c11 r=0 ohm id=r2 r=22 ohm id=r3 r=51 ohm tlinp id=tl1 z0=50 ohm l=300 mil eeff=3.16 loss=0 f0=0 ghz id=r1 r=15 ohm id=r4 r=0 ohm tlinp id=tl2 z0=50 ohm l=100 mil eeff=3.16 loss=0 f0=0 ghz tlinp id=tl3 z0=50 ohm l=125 mil eeff=3.16 loss=0 f0=0 ghz id=c10 c=1.5 pf id=c1 c=56 pf id=c3 c=56 pf 1 2 3 4 5678 9 10 11 12 13 14 15 16 id=ecp200d on the wj evaluation board. c8 should be placed between silk screen markers "f" and "g" on the wj evaluation board. c9 should be placed between silkscreen markers "2" and "3" +5.6v zener vsupply = +5v size 1008 the wj evaluation board. c10 should be placed at silkscreen marker "5" on s21 vs. frequency 8 9 10 11 12 13 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) s21 ( db ) +25c -40c +85c s11 vs. frequency -30 -25 -20 -15 -10 -5 0 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) s11 ( db ) +25c -40c +85c s22 vs. frequency -20 -15 -10 -5 0 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) s22 ( db ) +25c -40c +85c noise figure vs. frequency 0 2 4 6 8 10 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) nf ( db ) -40c +25c +85c p1db vs. frequency circuit boards are optimized at 1960 mhz 26 28 30 32 34 36 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) p1db ( dbm ) -40c +25c +85c acpr vs. channel power is-95, 9 ch. fwd, 885 khz offset, 30 khz meas bw, 1960 mhz -75 -65 -55 -45 -35 22 23 24 25 26 27 28 29 output channel power (dbm) acpr ( dbc ) -40 c +25 c +85 c oip3 vs. frequency +25 c, +17 dbm/tone 35 40 45 50 55 1930 1940 1950 1960 1970 1980 1990 frequency (mhz) oip3 ( dbm ) oip3 vs. temperature freq. = 1960 mhz, 1961 mhz, +17 dbm/tone 35 40 45 50 55 -40 -15 10 35 60 85 temperature (c) oip3 ( dbm ) oip3 vs. output power freq. = 1960 mhz, 1961 mhz, +25 c 35 40 45 50 55 12 14 16 18 20 22 output power (dbm) oip3 ( dbm )
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 5 of 6 april 2006 ecp200d 2 watt, high linearit y ingap hbt amplifier product information the communications ed g e tm 2140 mhz application circuit (ecp200d-pcb2140) typical rf performance at 25 c frequency 2140 mhz s21 ? gain 10 db s11 ? input return loss -20 db s22 ? output return loss -6.8 db output p1db +33.2 dbm output ip3 (+17 dbm / tone, 1 mhz spacing) +48 dbm w-cdma channel power (@ -45 dbc aclr) +25.3 dbm noise figure 7.7 db device / supply voltage +5 v quiescent current (1) 800 ma 1. this corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11, and 16. id=c1 c=56 pf id=c2 c=56 pf id=c3 c=1e7 pf id=c4 c=1000 pf id=c5 c=10 pf id=c6 c=1000 pf id=c8 c=3 pf id=c9 c=3 pf id=l1 l=18 nh id=c11 r=0 ohm id=r2 r=22 ohm id=r3 r=51 ohm id=r1 r=15 ohm id=r4 r=0 ohm tlinp id=tl1 z0=50 ohm l=175 mil eeff=3.16 loss=0 f0=0 ghz tlinp id=tl2 z0=50 ohm l=75 mil eeff=3.16 loss=0 f0=0 ghz id=c10 c=1.5 pf id=c3 c=56 pf tlinp id=tl3 z0=50 ohm l=100 mil eeff=3.16 loss=0 f0=0 ghz 1 2 3 4 5678 9 10 11 12 13 14 15 16 id=ecp200d the wj evaluation board. c10 should be placed at silkscreen marker "4" on on the wj evaluation board. c8 should be placed at silk screen marker "d" on the wj evaluation board. c9 should be placed at silkscreen marker "2" +5.6v zener vsupply = +5v size 1008 s21 vs. frequency 7 8 9 10 11 12 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) s21 ( db ) +25c -40c +85c s11 vs. frequency -30 -25 -20 -15 -10 -5 0 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) s11 ( db ) +25c -40c +85c s22 vs. frequency -20 -15 -10 -5 0 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) s22 ( db ) +25c -40c +85c noise figure vs. frequency 0 2 4 6 8 10 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) nf ( db ) -40c +25c +85c p1db vs. frequency circuit boards are optimized at 2140 mhz 26 28 30 32 34 36 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) p1db ( dbm ) -40c +25c +85c acpr vs. channel power 3gpp w-cdma, test model 1+64 dpch, 5 mhz offset, 2140 mhz -60 -55 -50 -45 -40 -35 22 23 24 25 26 27 output channel power (dbm) acpr ( dbc ) -40 c +25 c +85 c oip3 vs. frequency +25 c, +17 dbm/tone 35 40 45 50 55 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) oip3 ( dbm ) oip3 vs. temperature freq. = 2140 mhz, 2141 mhz, +17 dbm/tone 35 40 45 50 55 -40 -15 10 35 60 85 temperature (c) oip3 ( dbm ) oip3 vs. output power freq. = 2140 mhz, 2141 mhz, +25 c 35 40 45 50 55 12 14 16 18 20 22 output power (dbm) oip3 ( dbm )
specifications and information are subject to change without notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 6 of 6 april 2006 ecp200d 2 watt, high linearit y ingap hbt amplifier product information the communications ed g e tm ecp200d-g mechanical information this package is lead-free/rohs-c ompliant. it is compatible with both lead -free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating material on the pins is ann ealed matte tin over copper. outline drawing land pattern thermal specifications parameter rating operating case temperature -40 to +85 c thermal resistance, rth (1) 17.5 c / w junction temperature, tj (2) 155 c notes: 1. the thermal resistance is referenced from the junction-to-case at a case temperature of 85 c. tj is a function of the voltage at pins 10 and 11 and the current applied to pins 10, 11, and 16 and can be calculated by: tj = tcase + rth * vcc * icc 2. this corresponds to the typical biasing condition of +5v, 800 ma at an 85 c case temperature. a minimum mttf of 1 million hours is achieved for junction temperatures below 247 c. product marking the component will be marked with an ?e200g? designator with an alphanumeric lot code on the top surface of the package. the obsolete tin-lead package is marked with an ?ecp200d? designator followed by an alphanumeric lot code. tape and reel specifications for this part are located on the website in the ?application notes? section. esd / msl information esd rating: class 1b value: passes between 500 and 1000v test: human body model (hbm) standard: jedec standard jesd22-a114 msl rating: level 2 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. a heatsink underneath the ar ea of the pcb for the mounted device is highly recommended for proper thermal operation. damage to the device can occur without the use of one. 2. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated thru diameter of .25 mm (.010?). 3. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. mounting screws can be adde d near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 5. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 6. rf trace width depends upon the pc board material and construction. 7. use 1 oz. copper minimum. 8. all dimensions are in millimeters (inches). angles are in degrees. mttf vs. gnd tab temperature 100 1000 10000 100000 60 70 80 90 100 110 120 tab temperature (c) mttf (million hrs)
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